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Les
publications majeures de niveau international
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2000
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[P1] C. Poilâne, P. Delobelle, C. Lexcellent, S. Hayashi,
H. Tobushi. Analysis of the mechanical behavior of shape memory
polymer membranes by nanoindentation, bulging and point membrane
deflection tests, Thin Solid Films, Vol. 379, N°1-2, pp. 156-165
(2000).
[P2] P. Ruterana, J. Chen, V. Potin, G. Nouet. The multiple
atomic configuration and formation mechanisms of extended
defects in wurtzite GaN, , J. Phys. Cond. Matt., Vol. 12,
N°49, pp. 10185-10194 (2000).
[P3] A. Béré, J. Chen, A. Hairie, G. Nouet,
E. Paumier. Determination of the high c/a ratio of hexagonal
metal with a semi-empirical tight-bonding method, Comput.
Mat. Sci., Vol. 17, N°2-4, pp. 249-254 (2000).
[P4] C. Poilâne, E. Lantz, G. Tribillon, P. Delobelle.
Measurement of in-plane displacement fields by a spectral
phase algorithm applied to numerical speckle photography for
microtensile tests, EPJ Appl. Phys., Vol. 11, pp. 131-145
(2000).
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| 2001 |
[P5] J. Bayard, M. Ayachi. Transformation of a classical VCO
into a Voltage Controlled Quadrature sinusoidal Oscillator,
Review of Scientific Instruments, Vol. 72, N° 8, pp. 3480-3481
(aug 2001).
[P6] P. Ruterana, J. Chen, G. Nouet. The atomic structure and
properties of wurtzite GaN epitaxial layers, Mat. Sci. Eng.,
Vol. B82, pp. 123-127 (2001).
[P7] J. Chen, G. Nouet, P. Ruterana. Energetic calculation of
coincidence grain boundaries with a modified Stillinger-Weber
potential, Phys. Stat. Sol.(b), Vol. 228, pp. 411 (2001)
[P8] A. Vivet, L. Orgéas, C. Lexcellent, D. Favier, J.
Bernardini. Shear and tensile pseudoelastic behaviours of CuZnAl
single crystals, Scripta Mater., Vol. 45, N°1, 2001, pp.
33-40 (2001).
[P9] J. Chen, P. Ruterana, G. Nouet. Multiple atomic configurations
of the a edge threading dislocations in GaN, Mat. Sci. Eng.,
Vol. B82, pp. 117-119 (2001). |
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| 2002 |
[P10] L. Bechiri, N. Benslin, M. Benabdeslem, L. Mahdjoubi,
J. Chen, P. Ruterana, G. Nouet. Properties of stacked Cu/In/Se
thin films, Annales de Chimie, Vol. 27, N°2, pp. 47-51 (2002).
[P11] J. Bayard, M. Ayachi. OTA or CFA based LC sinusoidal oscillators.
Analysis of the magnitude stabilization phenomenon, IEEE Transactions
on Circuits and systems part 1 (aug 2002).
[P12] A. Bere, J. Chen, P. Ruterana, A. Serra, G. Nouet. The
atomic configurations of the a threading dislocation in GaN,
Comput. Mat. Sci., Vol. 24, N°1-2, pp. 144-147 (2002).
[P13] S. Kret, P. Dluzewski, G. Maciejewski, V. Potin, J. Chen,
P. Ruterana, G. Nouet. The dislocation of low-angle grain boundaries
in GaN epilayers : a HRTEM quantitative study and finite element
stress state calculation, Diamond and Related Materials, Vol.
11, N°3-6, pp. 910-913, (2002).
[P14] C. Lexcellent, A. Vivet, C. Bouvet, S. Calloch. Experimental
and numerical determinations of the initial surface of phase
transformation under biaxial loading in some polycrystalline
shape memory alloys, J. Mech. Phys. Solids, Vol. 50, N°12,
pp. 2717-2735 (2002).
[P15] J. Chen, A. Hairie, E. Paumier, G. Nouet. Energy of the
Two Variants 11A and 11B in Silicon and Germanium by the Semi-Empirical
Tight-Binding Method, Phys. status solidi, B, Basic res., Vol.
232, N°2, pp. 191-195 (2002).
[P16] A. Béré, J. Chen, P. Ruterana, G. Nouet,
A. Serra. On the core structure of the 1/3<11-20> edge
dislocations in GaN, J. Phys. Cond. Matt., Vol. 14, pp. 1 (2002).
[P17] A Vivet, S. Kret, P. Ruterana. Investigation of the InGaN
quantum wells compositional inhomogeneity, Phys. Stat. Sol.
(c),Vol. 0, N°1, pp. 307-310 (2002).
[P18] P. Ruterana, S. Kret, A. Vivet, G. Maciejewski, P. Dluzewski.
Composition fluctuation in InGaN quantum wells made from molecular
beam or metalorganic vapor phase epitaxial layers, J. Appl.
Phys., Vol. 91, N°11, pp. 8979-8985 (2002). |
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| 2003 |
[P19] J. Chen, P. Ruterana, G. Nouet. Structural units and low-energy
configurations of [0001] tilt grain boundaries in GaN, Phys.
rev., B, condens. matter mater. phys., Vol. B67, N°20, pp.
205-210 (2003).
[P20] J. Chen, P. Ruterana, G. Nouet. Atomic structure and energy
of grain boundaries in GaN, Phys. Stat. Sol. (c),Vol. 0, N°1,
pp. 2436-2439 (2003). |
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| 2004 |
[P21] L. Orgéas, A. Vivet, D. Favier, C. Lexcellent,
Y. Liu. Hysteretic behaviour of a Cu-Zn-Al single crystal during
superelastic shear deformation, Scripta Mater., Vol. 51, N°4,
pp. 297-302 (2004).
[P22] .P. Ruterana, J. Chen, G. Nouet, Benliang Lei, Haohua
Ye, Guanghui Yu, Ming Qi, Aizhen Li. Structural analysis of
thick GaN films grown by hydride vapour phase epitaxy, Phys.
Stat. Sol. (b), Vol. 241, N]°12,pp.°2689–2692
(2004).
[P23] A. Bere, J. Chen, A. Hairie, E. Paumier, G. Nouet. Basal
stacking fault and twin energy by a semi-empirical tight-binding
method for zinc and cadmium, phys.stat.sol.(b), 241, No. 11,
2482-2488 (2004).
[P24] P. Ruterana, J. Chen, G. Nouet, Benliang Lei, Haohua Ye,
Guanghui Yu, Ming Qi, and Aizhen Li. Structural analysis of
thick GaN films grown by hydride vapour phase epitaxy, phys.
stat. sol. (b) 241, No. 12, 2689–2692 (2004).
[P25] J. Chen, A. Béré,c, G. Nouet, P. Ruterana,
Analysis of faceting of grain boundaries in GaN, Superlattices
and Microstructures, 36, 369-375 (2004).
[P26] Jun Chen, Benliang Lei, Haohua Ye, Guanghui Yu, Ming Qi,
Aizhen Li. Characterization of thick HVPE GaN films, Gérard
Nouet, Pierre Ruterana, Superlattices and Microstructures, 36,
417-424 (2004) |
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| 2005 |
[P27] A. Béré, P. Ruterana, G. Nouet, A. T. Blumenau,
S. Sanna, T. Frauenheim, J. Chen and J. Koulidiati. Density-functional
tight-binding calculations of electronic states associated with
grain boundaries in GaN, Phys.Rev. B71, 125211 (2005).
[P28] I. Belabbas, M. Akli Belkhir, Y. H. Lee, A. Béré,
P.Ruterana, J. Chen, and G. Nouet. Atomic structure and energy
of threading screw dislocations in wurtzite GaN, phys. stat.
sol. (c) 2, No. 7, 2492–2495 (2005) |
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Les
communications avec actes
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| 2000 |
[C1] C. Poilâne, E. Lantz, G. Tribillon, P. Delobelle.
Spectral algorithm: competitive way to measure rapidly small
displacements by numerical speckle photography, INTSL2000, Lausanne,
Switzerland (septembre 2000), publié dans Interferometry
in Speckle Light, Theory and Applications, Jacquot-Fournier
Eds, pp. 83-90 (2000). |
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| 2001 |
[C2] C. Lexcellent, A. Vivet, C. Bouvet, P. Blanc, C. Satto,
D. Schyvers. From the lattice measurements of the austenite
and the martensite cells to the macroscopic mechanical behavior
of shape memory alloys, EMMC5, Delft, Pays-Bas (mars 2001),
publié dans J. Phys. IV, Vol. 85 (2001).
[C3] S. Kret, J. Chen, P. Ruterana and G. Nouet. Investigation
of threading dislocations atomic configuration in GaN by HRTEM,
geometrical phase analysis and atomistic modelling, Microscopy
of semiconducting materials, Oxford, Angleterre, Inst. Phys.
Conf. Ser., Vol. 169 (2001).
[C4] S. Kret, P. Ruterana, J. Chen, and G. Nouet. Analysis of
strain in sub-grains with variable misorientation in GaN epilayers
by digital processing of HRTEM images, Mat. Res. Soc. Symp.
Proc., Vol. 639 (2001).
[C5] C. Bouvet, S. Calloch, C. Lexcellent, A. Vivet. Testing
and Modeling a Cu-Al-Be Shape memory alloy behavior under complex
stress loading, IUTAM SYMPOSIUM, Hong-Kong (juin 2001). |
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| 2002 |
[C6] J. Bayard, M. Ayachi. Amélioration d'une chaîne
d'acquisition numérique à l'aide d'un amplificateur
à contre réaction de courant, CNR-IUT, Le Creusot
(mai 2002).
[C7] A. Béré, J. Chen, P. Ruterana, G. Nouet,
A. Serra. On the core structure of the 1/3<11-20> edge
dislocations in GaN, EDS2002, Bologne, Italie (juin 2002).
[C8] J. Bayard, M. Ayachi. Diminution du taux de distorsion
du signal de sortie d'un échantillonneur bloqueur en
lui associant un amplificateur à contre réaction
de courant, TAISA’2002 Paris (septembre 2002).
[C9] J. Chen, P. Ruterana, G. Nouet. Analysis of <0001>
tilt grain boundaries in GaN at the atomic scale, MRS Fall Meeting
2002 (Décembre 2002). |
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| 2003 |
[C10] J. Chen, P. Ruterana, G. Nouet. Theoretical analysis of
<0001> tilt grain boundaries in GaN at the atomic scale,
Mat. Res. Soc. Symp. Proc., Vol. 743 (2003).
[C11] C. Poilâne, A. Vivet, J. Chen, J. Bayard. Banc d’essais
de traction pour films minces de tous types, CNRIUT 2003, Tarbes,
France (mai 2003).
[C12] J. Bayard, A.-M. Bayard, M. Ayachi, P. Bruneau. Détection
de micro mouvements par capteur inductif à courant
de Foucault, CNR-IUT 2003, Tarbes, pp.250-256 (mai 2003). |
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[C13] G. Nouet, P. Ruterana, J. Chen. Structural units and
energy of grain boundaries in GaN, Mat. Res. Soc. Symp. Proc.,
[C14] J. Chen, P. Ruterana, G. Nouet, Analysis of [0001] tilt
grain boundaries in GaN, 13th International Conference on
Microscopy of Semiconducting Materials, Cambridge, Angleterre,
(avril 2003), Inst. Phys. Conf. Ser.
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| 2004 |
[C15] J. Bayard, A.-M. Bayard, M. Ayachi. Lissage de la tension
de sorite d’un échantillonneur bloqueur, CNR-IUT
2004, Nîmes, pp. 265-270 (mai 2004). |
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Les
conférences invitées dans les congrès
internationaux
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| 2001 |
[I1] C. Lexcellent, C. Bouvet, S. Calloch, A. Vivet. A few experimental
and theoretical tools for modelling shape memory alloys thermomechanical
behaviour, Workshop on shape memory materials, Warsaw, Pologne
(septembre 2001), conférence invitée. |
Autres
publications
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| 2000 |
[W1] N. Aïchoune, J. Chen, P. Ruterana, G. Nouet, A. Hairie,
E. Paumier. Simulation des propriétés physiques
et structurales de GaN avec la méthode semi-empirique
des liaisons fortes : potentiel de Boucher, Ecole Thématique CNRS,
Délégation Province Côte D’Azur, Orcières
Merlette, 27-31 Mars 2000.
[W2] J. Chen, A. Béré, P. Ruterana, G. Nouet.
Empirical potential for modelling the prismatic stacking fault
in (Al , Ga, In) Nitrides, Ecole Thématique CNRS,
Délégation Province Côte D’Azur, Orcières
Merlette, 27-31 Mars 2000.
[W3] J. Chen, P. Ruterana, and G. Nouet. An atomistic study
of the atomic configurations of the edge threading dislocation
in GaN using an empirical potential, EDS 2000, Brighton 18-22
July 2000.
[W4] J. Chen, P. Ruterana, G. Nouet. Dislocations and grain
boundaries modelling using empirical potentials, Berlin, Fritz-Haber-Institut,
9 octobre 2000. |
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| 2001 |
[W5] J. Chen, A. Béré, P. Ruterana, A. Serra,
G. Nouet. Empirical potential investigation of edge threading
dislocations and grain boundaries in GaN, Workshop Fundamental
tools for interface analysis at atomic level, San Feliu, Spain,
2-4 april 2001.
[W6] S. Kret, P. Ruterana, J. Chen, G. Nouet. Digital phase
analysis of threading dislocation networks in GaN epilayers,
Workshop Fundamental tools for interface analysis at atomic
level, San Feliu, Spain, 2-4 april 2001. |
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| 2002 |
[W7] J. Chen, G. Nouet, S. Kret, P. Ruterana. Modeling of dislocations
and grain boundaries in GaN using a modified Stillinger Weber
empirical potential, Workshop on III- nitride based materials
and devices, Berlin, Allemagne, January 12- 17, 2002.
[W8] G. Nouet, P. Ruterana, S. Kret, J. Chen, V. Potin. Determination
of the atomic structure of extended defects by HREM, Workshop
on III- nitride based materials and devices, Berlin, Allemagne,
January 12- 17, 2002.
[W9] S.Kret, A. Vivet, P. Dluzewski , P. Ruterana. Strain, stress
and chemical composition at atomic scale studies in gallium
nitride based compounds, Workshop on III- nitride based materials
and devices, Berlin, Allemagne, January 12- 17, 2002.
[W10] A.Vivet, S. Kret and P. Ruterana. Modelling of indium
clustering inside QWs using finite elements analysis, Workshop
on III- nitride based materials and devices, Berlin, Allemagne,
January 12- 17, 2002. |
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